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ECN publicatie:
Titel:
A high throughput PECVD reactor for deposition of passivating SiN layers
 
Auteur(s):
Soppe, W.J.; Duijvelaar, B.G.; Schiermeier, S.E.A.; Weeber, A.W.; Steiner, A.; Schuurmans, F.M.
 
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2000
 
ECN publicatienummer: Publicatie type:
ECN-RX--00-021 Conferentiebijdrage
 
Aantal pagina's: Volledige tekst:
4 Download PDF  (111kB)

Gepresenteerd op: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.

Samenvatting:
A new high throughput PECVD reactor for deposition of passivating SiNlayers is presented. It is shown that the throughput of the reactor is easily upscalable to industrial demands of more than 1000 wafers/hr and that the deposited SiN layers have excellent surface- and bulk passivating properties. Solar cells with an efficiency of more than 14.5% have been made. 5 refs.


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