ECN publicatie:
Boron concentration measurements at the I/P interface in nip a-Si solar cells
Aken, B.B. van; Duchamp, M.; Boothroyd, C.B.; Dunin-Borkowski, R.E.; Barnes, J-P.; Veillerot, M.; Soppe, W.J.
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 5-9-2011
ECN publicatienummer: Publicatie type:
ECN-M--11-022 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (335kB)

The p-type Si layer in n-i-p a-Si and ?c-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.

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