ECN publicatie:
Deposition of µc-Si:H by Microwave PECVD - Influence of process conditions on layer properties
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 11-9-2006
ECN publicatienummer: Publicatie type:
ECN-RX--06-029 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
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Gepresenteerd op: 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, 4-8 september 2006.

Microwave PECVD (MWPECVD) is a well applicable deposition technique for large area and high rate deposition. Therefore, it is a very promising method for industrial scale fabrication of microcrystalline (µc-Si:H) and amorphous (a-Si:H) silicon solar cells. We have investigated the addition of argon (Ar) in the MWPECVD process and developed a start-up procedure of the deposition, which both stabilize the microwave plasma on different time scale and, therefore, improve the reproducibility of the process. It is shown that the material properties of the silicon layers deteriorate if one partly substitutes H2 by Ar during the deposition. In conclusion a MWPECVD process without Ar should be developed. The new start-up procedure leads to silicon layers of low defect density as the analysis of electrical (sphoto, sdark) and optical (a @ 0.8 eV, FTPS) measurements indicates. It ensures a stabilized plasma when the deposition is started. Further experiments indicate the need of a substrate temperature of T = 200°C or lower for the deposition of µc-Si:H-, and a-Si:H-layers with improved optical and electrical properties.

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