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Titel:
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Analysis of cell-process induced changes in multicrystalline silicon
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-5-2003
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--03-015
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(72kB)
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Gepresenteerd op: 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 mei 2003.
Samenvatting:
We analyse the effect of individual process steps onthe material quality of mc-Si wafers. In addition to the
commonly used recombination lifetime, we measure
material parameters such as the concentration of interstitial
oxygen, and of FeB. We show that such additional
variables in the analysis can give much more information
and insight into the effect of individual process steps.
We have processed ingots from several
manufacturers using a fired-through silicon nitride
passivation scheme, and analysed several variations of
process steps. Main results include i) the temperature
dependence of phosphorus gettering; ii) the absence of a
clear synergetic effect of co-firing silicon nitride with an
aluminium rear side coating; and iii) influence of
phosphorus diffusion on subsequent hydrogen passivation.
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