ECN publicatie:
Contacting and interconnection of CISCuT material
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2000
ECN publicatienummer: Publicatie type:
ECN-RX--00-023 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (147kB)

Gepresenteerd op: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.

The specific properties of the CISCuT material ask for adapted contactmaterials and interconnection concepts. To control the material property and discover damages that are introduced during contacting shunt formation is followed by suitable detection methods. One method to discover shunts is a locally resolved (1mm steps) Voc-scan of the cell area at bias irradiation. Moreover, a novel shunt detection method, the Parallel Resistance Analysis by Mapping of Potential (PRAMP) is tested for the first time on CIS material. After optimization of metal composition and deposition method a sputtered (NiCrCu)Sn metallisation showed to be the most suitable contact for the CISCuT cells. The interconnection methods ultrasonic welding and thermode soldering are tested. At present the thermode soldering method derived to be most favourable for the interconnection of the CISCuT-strips. The thin copper support and high flexibility of the CISCuT strips allow to choose for a roof-tile arrangement as module design. 4 refs.

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