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ECN publicatie:
Effective and practical phosphorous gettering of multicrystalline silicon
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-6-2005
ECN publicatienummer: Publicatie type:
ECN-RX--05-002 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
3 Download PDF  (141kB)

Gepresenteerd op: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.

Gettering during an emitter diffusion in multicrystalline silicon is improved by adding a low-temperature tail to the standard diffusion. The tail keeps the emitter sheet resistance within the usable range for solar cells. An increase in minority carrier lifetime by a factor ten is obtained. Decrease in recombination activity of grain boundaries and decrease in interstitial iron concentration are mainly responsible for this improved lifetime. The proposed mechanisms for this improvement are: reduction of size of precipitates because of the longer duration and improved thermodynamics and kinetics of the gettering because of the lower temperature.

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