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Titel:
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Effects of plasma conditions on density of microcrystalline silicon
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-6-2004
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--04-066
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(948kB)
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Gepresenteerd op: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.
Samenvatting:
Micro-Wave PECVD with a linear plasma source is applied for deposition
of intrinsic layers for
mc-Si solar cells. An important advantage of
the linear MW-PECVD method is the capability of large-area deposition
of Si layers at high deposition rates. This makes MW-PECVD method a
promising method for large-scale industrial fabrication of mc-Si
and a-Si/mc-Si solar cells. A possible drawback of high deposition rate
of mc-Si at low temperatures is the formation of layers with high
porosity and high defect density. In this paper, the plasma geometry
has been optimized to deposit more dense and less defective layers.
The samples have been characteriz
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