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Titel:
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Influence of grain orientation on contact resistance at higher emitter resistances, investigated for alkaline and acid saw damage removal
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-5-2003
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--03-017
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(529kB)
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Gepresenteerd op: 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 mei 2003.
Samenvatting:
The relation between grain orientation and contactresistance was investigated for alkaline and acid saw
damage removal using the Corescan and optical
microscopy. For alkaline etched cells, it was found that
grains oriented near <100> are badly contacted, while
other orientations are well contacted. A sheet resistance
scan on the emitter of a neighbour wafer suggests a
relation between <100> orientation and increased sheet
resistance, but whether this explains the bad contact is far
from clear yet. For acid etched cells, the contact resistance
was found to be low for all orientations. This means that
acid etching does not only reduce reflectance losses, but
contact resistance losses as well.
Figure 1: Corescan instrument
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