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ECN publicatie:
LPE-deposition of crystalline silicon layers on recrystallised silicon-based ceramics
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2000
ECN publicatienummer: Publicatie type:
ECN-RX--00-022 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
3 Download PDF  (1100kB)

Gepresenteerd op: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.

Recrystallisation of (thick) silicon layers can be accomplished without acapping layer. However, a substantial part of the recrystallised layer is highly defected, and has to be removed before a closed layer can be deposited on it by LPE. By tuning the cooling trajectory, the in LPE well known 'grain boundary effect' can be reduced, although we did not yet succeed in completely prohibiting the groove formation. Also, the use of metallurgical grade silicon in the nucleation layer resulted in pinholes in the LPE grown active layer. 8 refs.

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