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Titel:
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Crystalline silicon growth on silicon nitride and oxynitride substrates for thin film solar cells
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-5-2000
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--00-013
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(903kB)
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Gepresenteerd op: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.
Samenvatting:
Si infiltrated SiAlON substrates were tape-casted and sintered froma
SiAlON slurry with additional crystalline Si. The crystalline Si in
the
matrix of the substrate acts as seeds for epitaxial growth. Silicon
layers
were deposited by liquid phase epitaxy on these substrates. A closed
layer
could be grown from a saturated Ga/Al solution on Si infiltrated SiAlON
with
42% Si. The crystals forming the layer are faceted and reach sizes
of more
than 100 mum in diameter. This layer is highly p doped because of the
incorporation of Ga and Al. 11 refs.
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