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ECN publicatie:
Crystalline silicon growth on silicon nitride and oxynitride substrates for thin film solar cells
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2000
ECN publicatienummer: Publicatie type:
ECN-RX--00-013 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (903kB)

Gepresenteerd op: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.

Si infiltrated SiAlON substrates were tape-casted and sintered froma SiAlON slurry with additional crystalline Si. The crystalline Si in the matrix of the substrate acts as seeds for epitaxial growth. Silicon layers were deposited by liquid phase epitaxy on these substrates. A closed layer could be grown from a saturated Ga/Al solution on Si infiltrated SiAlON with 42% Si. The crystals forming the layer are faceted and reach sizes of more than 100 mum in diameter. This layer is highly p doped because of the incorporation of Ga and Al. 11 refs.

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