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ECN publicatie:
Remote linear RF-PECVD deposited high quality a-Si:H(P) layers and application in Si heterojunction structures
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 21-9-2009
ECN publicatienummer: Publicatie type:
ECN-M--09-031 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
5 Download PDF  (952kB)

Gepresenteerd op: 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21-25 september 2009.

In this paper, we report on deposition and properties of high quality boron doped p-type amorphous Si (a-Si:H(p)) layers on n-type float zone Si(100) wafers by remote linear radio frequency plasma-enhanced CVD. The a-Si:H(p) layers show excellent surface passivation that is comparable to that of a-Si:H intrinsic layers (a-Si:H(i)), and high stability of the passivation when stored in the dark. Additionally, the measured dark conductivity of deposited a-Si:H(p) is increased up to >7?10-6 S/cm by annealing. In a Si heterojunction cell structure, the a-Si:H(p) layer will be the emitter on an n-type base wafer. The effective lifetime of test structures of a Si(p)/c Si(n)/a-Si(n) has approached 1 ms, and a high pseudo fill factor and open circuit voltage have been obtained from a SunsVoc measurement. We conclude that these a-Si:H(p) layers are very promising for the application in high performance silicon heterojunction solar cells without using an intermediate a-Si:H(i) layer.

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