ECN publicatie:
Optimization of hydrogenated amorphous silicon germanium thin films and solar cells deposited by hot wire chemical vapor deposition
Veldhuizen, L.W.; Werf, C.H.M. van der; Kuang, Y.; Bakker, N.J.; Yun, S.J.; Schropp, R.E.I.
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 30-11-2015
ECN publicatienummer: Publicatie type:
ECN-W--15-024 Artikel wetenschap tijdschrift
Aantal pagina's:

Gepubliceerd in: Thin Solid Films (Elsevier), , 2015, Vol.595, p.226-230.

This work studies hydrogenated amorphous silicon germanium films, deposited by hot wire chemical vapor deposition, to be used as low band gap absorber material in thin film solar cells. Material properties, such as the bonding configurations, the ambipolar diffusion length and the optical band gap, were examined as a function of the substrate temperature and germanium content. Our best materials were incorporated in single junction solar cells with high long-wavelength response and a tandem solar cell with an efficiency of 10.42%.

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