ECN publicatie:
Boron-oxygen defects in compensated p-type Czochralski silicon
Macdonald, D.; Liu, A.; Rougieux, F.; Cuevas, A.; Lim, B.; Schmidt, J.; Di Sabatino, M.; Geerligs, L.J.
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 21-9-2009
ECN publicatienummer: Publicatie type:
ECN-M--09-044 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
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Gepresenteerd op: 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21-25 september 2009.

The extent of formation of the well-known boron-oxygen defect has been measured in deliberately compensated p-type Czochralski silicon. Both the defect concentration and the defect formation rate confirm recent results showing that the amount of boron-oxygen defects formed is determined by the net doping p0=NA-ND, rather than the total boron concentration NA. The presence of boron-phosphorus pairs has been postulated previously as a possible explanation for this effect. However, we find that the existence of such pairs is not consistent with measurements of the majority carrier mobility, and the crossover point of interstitial iron/iron-boron pairs in compensated silicon. However, whatever the cause of the reduced impact of oxygen-boron defects in compensated silicon, the implications for solar cells made with compensated feedstock are positive.

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