ECN publicatie:
Impact of defect distribution and impurities on multicrystalline silicon cell efficiency
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2003
ECN publicatienummer: Publicatie type:
ECN-RX--03-016 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (547kB)

Gepresenteerd op: 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 mei 2003.

The material properties of several commerciallyavailable multicrystalline silicon ingots are analysed, and their relation with cell efficiency is evaluated. Three aspects are clearly correlated to the cell results. i) Fe contamination, in particular the excessive contamination at the edge of ingots; ii) oxygen contamination, deteriorating the properties in the bottom of some ingots, and iii) distribution of minority carrier lifetime in wafers, which is correlated to the crystal defect density. With consideration of these aspects, the variation of cell properties within an ingot, and to a lesser extent between ingots, can be understood.

Terug naar overzicht.