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Titel:
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Silicon solar cells textured by low damage RIE with natural lithography
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-5-2002
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--02-020
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(2617kB)
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Gepresenteerd op: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.
Samenvatting:
RIE with natura1 lithography has two advantages over RIE with automasking:the process causes less surface damage and the process window is broader.
We have
systematically explored the parameter range of our process and identified
a natura1 lithography RIE process which causes a minimum amount of surface
damage. By using this RIE process and a wet chemical etch of a few nanometers,
we reached a gain in shortcircuit current of 2.9% and no loss in open
circuit voltage. This resulted in an absolute efficiency gain of 0.6%
for the RIE textured wafers.
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