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Titel:
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Single step selective emitter using diffusion barriers
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-5-2000
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--00-011
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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3
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Download PDF
(420kB)
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Gepresenteerd op: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.
Samenvatting:
A new selective emitter process is introduced using diffusion barriers.These barriers can be selectively screen-printed on silicon material before
dopant diffusion is applied. So, only an extra print and drying step has to
be introduced before diffusion. In this way selective emitters can be made
with belt type diffusion using liquid dopants as well as with tube furnaces
and gaseous dopants. Homogeneous SiO2-barrier coatings have been produced up
to a thickness of 1 mum without cracking. Also, doping beneath the
diffusion barrier can be adjusted between 50 and 150 Ohm/sq. First selective
emitters have been produced. 1 ref.
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