ECN publicatie:
Single step selective emitter using diffusion barriers
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2000
ECN publicatienummer: Publicatie type:
ECN-RX--00-011 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
3 Download PDF  (420kB)

Gepresenteerd op: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.

A new selective emitter process is introduced using diffusion barriers.These barriers can be selectively screen-printed on silicon material before dopant diffusion is applied. So, only an extra print and drying step has to be introduced before diffusion. In this way selective emitters can be made with belt type diffusion using liquid dopants as well as with tube furnaces and gaseous dopants. Homogeneous SiO2-barrier coatings have been produced up to a thickness of 1 mum without cracking. Also, doping beneath the diffusion barrier can be adjusted between 50 and 150 Ohm/sq. First selective emitters have been produced. 1 ref.

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