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Titel:
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Light-trapping in saw-damage etched silicon wafers
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1997
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--97-030
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Artikel wetenschap tijdschrift
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Aantal pagina's:
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5
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Gepubliceerd in: Paper, presented at the 14th European photovoltaic solar energy conference and exhibition, 30 June - 4 July 1997, Barcelona, Spa (), , , Vol., p.-.
Samenvatting:
In this work we investigate the light trapping properties of the textureproduced by saw-damage etches. A saw-damage etch is a concentrated lye etch
commonly used for saw-damage removal of silicon wafers. On multi-crystalline
silicon wafers such an etch gives a faceted surface. The facets typically
have low tilt angles of about 10 to 20 degrees resulting in a relatively flat
texture. Because of the flat texture, the reflection is about the same as for
a polished wafer. We show in the paper that the infrared light in the wafer
is still randomised and trapped. We demonstrate this by measuring and fitting
reflection- and transmission curves of saw-damage etched wafers both with-
and without evaporating a silver reflector on one side. From the observed
long wavelength reflection and transmission we can infer the light trapping
properties. The curves have been fitted using an optical model that takes
into account scattering. 7 figs., 8 refs.
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