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Titel:
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Crystal-orientation dependence of surface recombination velocity forsilicon nitride passivated silicon wafers
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
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1996
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--96-019
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Overig
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Aantal pagina's:
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Volledige tekst:
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6
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Niet beschikbaar.
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Samenvatting:
The crystal-orientation dependence of the surface recombination velocityfor silicon nitride coated silicon wafers is investigated and compared with
thermal oxides. A qualitative very similar orientation dependence of
Seff,d(deltan) for thermal oxide and PECVD nitride coated p-Si wafers
etched in diluted HF is found with Seff,d(deltan) (100)<(110)<(111).
The type of HF-etch (diluted or buffered HF) prior to deposition has a large
influence on Seff,d(deltan) for the nitride coated p-Si wafers. For
the nitride coated n-Si wafers etched in diluted HF no orientation dependence
of Seff,d(deltan) is observed. 2 figs., 1 tab., 15 refs.
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