ECN publicatie:
Light-induced degradation in compensated mc-Si p-type solar cell
Bernardini, S.; Saynova - Oosterling, D.S.; Binetti, S.; Coletti, G.
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 3-6-2012
ECN publicatienummer: Publicatie type:
ECN-M--12-061 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
6 Download PDF  (691kB)

Light-induced degradation (LID) due to boron-oxygen complex formation seriously deminishes the efficiency of p-type solar cells. The influence of dopants concentration, net doping and oxygen on the degradation process is investigated using a large variety of B and P compensated mc-Si ingots. Our experiments indicate that the trend of LID depends on the amounts of interstitial oxygen [Oi] and total boron [B]. No clear dependence was found on net doping.

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