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Titel:
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Light-induced degradation in compensated mc-Si p-type solar cell
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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3-6-2012
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ECN publicatienummer:
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Publicatie type:
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ECN-M--12-061
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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6
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Download PDF
(691kB)
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Samenvatting:
Light-induced degradation (LID) due to boron-oxygen complex formation seriously deminishes the efficiency of p-type solar cells. The influence of dopants concentration, net doping and oxygen on the degradation process is investigated using a large variety of B and P compensated mc-Si ingots. Our experiments indicate that the trend of LID depends on the amounts of interstitial oxygen [Oi] and total boron [B]. No clear dependence was found on net doping.
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