ECN publicatie:
Spatial ALD Al2O3 film integrated in low-cost, high-performance bifacial solar cells
Vermont, P.; Granneman, E.; Ernst, M.A.; Cesar, I.; Mewe, A.A.; Weeber, A.W.
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 24-9-2012
ECN publicatienummer: Publicatie type:
ECN-M--12-056 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
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ALD Al2O3 films have been integrated in an open rear-side p-PASHA (Passivated All Sides and H-pattern)type solar cell. The manufacturing of this cell is cost-effective as it uses a single dielectric Al2O3 layer (i.e. no SiNx capping layer), partial (30-50%) coverage of metal paste on the rear side, no laser opening or laser firing required, and co-firing of the Ag and Al pastes. The spatial ALD deposition is carried out in the Levitrack system which is characterized by a high throughput (up to 3600 wafers/hr) and strict separation of H2O and TMA compounds in the system. The Al2O3 film was thin enough to allow effective firing through, while avoiding the formation of defects (blisters) upon high-temperature firing. On p-type Cz and multi-crystalline material, the p-PASHA cell was superior to the reference full-BSF cell in JscxVoc by 1% and 2.5% respectively. Local IQE mapping indicates that the Al2O3 passivation performance is maintained after firing.

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