|
Titel:
|
|
Development of n-type silicon heterojunction solar cells by using novel linear remote rf PECVD a-Si:H deposition
|
|
|
|
Auteur(s):
|
|
|
|
|
|
Gepubliceerd door:
|
Publicatie datum:
|
|
ECN
Zonne-energie
|
6-9-2010
|
|
|
|
ECN publicatienummer:
|
Publicatie type:
|
|
ECN-M--10-012
|
Conferentiebijdrage
|
|
|
|
Aantal pagina's:
|
Volledige tekst:
|
|
4
|
Download PDF
(425kB)
|
Gepresenteerd op: 25th European Photovoltaic Solar Energy Conference and Exhibition - 5th World Conference on Photovoltaic Energy Conversion, Valencia, Spain, 6-10 september 2010.
Samenvatting:
We report on n-type silicon heterojunction (SHJ) solar cells made using novel pilot scale deposition equipment. We investigated the possibility to apply a simplified cell structure without a passivating intrinsic amorphous silicon buffer layer [a-Si:H(i)]. The doped amorphous silicon layers [a-Si:H (n/p)] were deposited by using a novel remote plasma enhanced chemical vapor deposition system (PECVD) with a linear radio frequency (rf) source. Processes for thin (10-20nm) doped a-Si:H layers with useful conductivity and surface passivation were developed and applied in the formation of the SHJ cell. A total recombination velocity of less than 40 cm/s on (100) surface was obtained. An efficiency of 13.2% of several untextured SHJ cells with an area of 21.1cm2 was established.
Terug naar overzicht.