ECN publicatie:
Structural and passivating properties of SiNx:H deposited using different precursor gases
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-6-2004
ECN publicatienummer: Publicatie type:
ECN-RX--04-062 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (560kB)

Gepresenteerd op: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.

Structural properties of SiNx:H layers deposited with N2SiH4 or NH3SiH4 using a MicroWave PECVD system are examined in detail and related to passivating properties. It is shown that the Si‑N bond density is an important parameter for both surface and bulk passivation. The lower the Si‑N bond density the better the surface passivation. This corresponds to higher Si‑H bond densities and a higher refractive index. For maximum bulk passivation there seems to be an optimal Si‑N bond density around 1.1´1023 cm-3. The Si‑N bond density is related to the relative change in H content during anneal.

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