ECN publicatie:
Effect of wafer thickness on the performance of mc-Si solar cells
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-10-2001
ECN publicatienummer: Publicatie type:
ECN-RX--01-023 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (214kB)

Gepresenteerd op: 17th European Photovoltaic Solar Energy Conference, Munich, Germany, 22-26 oktober 2001.

The influence of the thickness of silicon solar cells has been investigated using neighbouring multicrystalline silicon wafers with thickness ranging from 150 to 325 µm. It was found experimentally that ç is nearly independent of the wafer thickness. Jsc is nearly independent of the thickness due to a high internal reflectivity of the Al rear metallisation. A decrease in Jsc is observed only if the wafer thickness becomes less than about 200 µm. The weak dependence of Voc on the wafer thickness was well within experimental error in this investigation. From PC1D modelling it is concluded that ç is limited by the rear surface passivation of the commonly used Al-BSF. Alternative rear surface passivation schemes should increase the solar cell performance significantly, but this has not yet been confirmed experimentally.

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