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ECN publicatie:
Cell modifications for preventing potential-induced degradation in c-Si PV systems
Janssen, G.J.M.; Stodolny, M.K.; Aken, B.B. van; Loffler, J.; Hongna, Ma; Dongsheng, Zhang; Jinchao, Shi
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2017
ECN publicatienummer: Publicatie type:
ECN-V--17-003 Artikel vakblad
Aantal pagina's: Volledige tekst:
10  Niet beschikbaar.

Gepubliceerd in: Photovoltaics International (PV-Tech), , May 2017, Vol.36, p.84-96.

Potential-induced degradation (PID) in modules is a serious reliability issue for large PV systems. For commercial modules incorporating p-type cells, it has been established that local shunts in the cell are responsible for the degradation. In the case of modules with n-PERT (passivated emitter, rear totally diffused) cells, it has been predicted (and recently confirmed on a laboratory scale) that a different form of PID can occur, i.e. PID by surface polarization. The latest research at ECN has demonstrated the prerequisites for PIDstable n-PERT modules. The susceptibility to PID of n-PERT cells can be drastically reduced by modifications at the cell level, in particular to the anti-reflection coating. In this paper the mechanisms of PID in p-type and n-type cells are compared, as well as mitigation or prevention strategies, which can be either generic or specific to one of the mechanisms. In the concluding section, the implications for other cell architectures based on c-Si are also considered.

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