|
Titel:
|
|
LPE-growth of crystalline silicon layers on ceramic substrates
|
|
|
|
Auteur(s):
|
|
|
|
|
|
Gepubliceerd door:
|
Publicatie datum:
|
|
ECN
Zonne-energie
|
1998
|
|
|
|
ECN publicatienummer:
|
Publicatie type:
|
|
ECN-RX--98-034
|
Artikel wetenschap tijdschrift
|
|
|
|
Aantal pagina's:
|
|
|
6
|
|
Gepubliceerd in: Paper, presented at the 2nd World conference and exhibition on photovoltaic solar energy conversion, Vienna, Austria, 06-10 July (), , , Vol., p.-.
Samenvatting:
Fully closed silicon layers on ECN-made ceramic substrates were grown ina reproducible manner by standard Liquid Phase Epitaxy (LPE). Important
conditions for the growing of these layers are: the composition of the melt
(In/1%Al), the substrate material, and the temperature trajectory. The
experiments show that in order to obtain closed layers on ceramic substrates
with standard LPE processing it is necessary that the substrates contain a
high density of silicon seeds at the surface. The gas atmosphere, i.e. argon
versus argon/hydrogen, appears not to play an important role in this process.
Besides standard LPE processing, preliminary experiments were performed with
other LPE based-techniques, e.g. the Temperature Difference Method and
gas-phase assisted LPE as building blocks in a feasibility study towards a
continuous thin film silicon growth process. 5 refs.
Terug naar overzicht.