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ECN publicatie:
Crystal-orientation dependence of surface recombination velocity forsilicon nitride passivated silicon wafers
Gepubliceerd door: Publicatie datum:
ECN 1996
ECN publicatienummer: Publicatie type:
ECN-RX--96-019 Overig
Aantal pagina's: Volledige tekst:
6  Niet beschikbaar.

The crystal-orientation dependence of the surface recombination velocityfor silicon nitride coated silicon wafers is investigated and compared with thermal oxides. A qualitative very similar orientation dependence of Seff,d(deltan) for thermal oxide and PECVD nitride coated p-Si wafers etched in diluted HF is found with Seff,d(deltan) (100)<(110)<(111). The type of HF-etch (diluted or buffered HF) prior to deposition has a large influence on Seff,d(deltan) for the nitride coated p-Si wafers. For the nitride coated n-Si wafers etched in diluted HF no orientation dependence of Seff,d(deltan) is observed. 2 figs., 1 tab., 15 refs.

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