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ECN publicatie:
On accurate and quantitative measurements of iron-concentration in multicrystalline silicon by iron-boron pair dissociation
Geerligs, L.J.; Coletti, G.; Macdonald, D.
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 11-9-2006
ECN publicatienummer: Publicatie type:
ECN-RX--06-022 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (312kB)

Gepresenteerd op: 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, 4-8 september 2006.

This paper presents practical experimental aspects for determining the concentration of Fei in mc-Si by carrier lifetime measurements and (Fei+)(Bs-)-pair-dissociation. The information presented is useful to perform quantitatively correct measurements and understand the limitations of this measurement method. We focus on two aspects. First, we show the effect of performing measurements on areas with inhomogeneous lifetime. This can result in a significant error. At least in some cases this error is accompanied by a significant shift of the so-called crossover point of the Fei and FeB lifetime spectra, the fingerprint of Fei in silicon. Second, we demonstrate and quantify the effect of insufficient pair dissociation. The equations we provide can be used to estimate when pair dissociation is insufficient. This could happen, for example, when performing measurements on a silicon sample without surface passivation or with a relatively high Fei-concentration.

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