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Titel:
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Passivating mc-Si solar cells using SiNx:H: Magic or Physics
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-6-2005
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--05-007
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(319kB)
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Gepresenteerd op: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.
Samenvatting:
Bulk
passivation with SiNx:H has been so far a barely understood
effect that can only be optimized for cell production in an empirical
way. In this study we determine the structural properties of SiNx:H
layers and relate these to both the deposition parameters and its passivating
qualities for solar cells. These structural properties, such as Si-N
and Si-H bond densities, of the SiNx:H layers deposited with
either N2, NH3 or ND3 and silane are
measured with FTIR. We show that Si-N bond
density is an important parameter governing both the bulk and surface
passivation of
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