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Titel:
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Structural and passivating properties of SiNx:H deposited using different precursor gases
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-6-2004
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--04-062
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(560kB)
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Gepresenteerd op: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.
Samenvatting:
Structural properties of SiNx:H
layers deposited with N2SiH4 or NH3SiH4 using a MicroWave PECVD system are examined
in detail and related to passivating properties. It is shown that the
Si‑N bond density is an important parameter for both surface and
bulk passivation. The lower the Si‑N bond density the better the
surface passivation. This corresponds to higher Si‑H bond densities
and a higher refractive index. For maximum bulk passivation there seems
to be an optimal Si‑N bond density around 1.1´1023 cm-3. The Si‑N
bond density is related to the relative change in H content during anneal.
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