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ECN publicatie:
Light-Induced Lifetime Degradation in Multicrystalline Silicon
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-8-2003
ECN publicatienummer: Publicatie type:
ECN-RX--03-052 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (1428kB)

Gepresenteerd op: 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Vail CO, USA, 10-13 augustus 2003.

The correlation between interstitial oxygen content and light-inducedlifetime degradation in cast multicrystalline silicon is complex. On a wafer-averaged scale, there is a strong positive correlation, which has been parameterized in this paper to model the impact of this degradation on cell voltage for a typical industrial process. However, on a local, grain to grain scale within a given wafer, the degradation can vary by an order of magnitude, while the interstitial oxygen content remains almost unchanged. This supports recent suggestions that Oi is not directly involved in the chemical composition of the defect.

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