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Titel:
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Passivation on MC-Si solar cells with PECVD SiNx:H using N2 and SiH4
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Auteur(s):
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Rieffe, H.C.; Soppe, W.J.; Weeber, A.W.; Hong, J.; Kessels, W.M.M.; Sanden, M.C.M. van de; Arnoldbik, W.M.
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-10-2002
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--02-050
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(53kB)
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Gepresenteerd op: PV in Europe - From PV Technology to Energy Solutions Conference and Exhibition, Rome, Italy, 7-11 oktober 2002.
Samenvatting:
Application of N2 instead of NH3 as precursorgas in Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiNx:H
can have significant advantages with respect to safety and environment.
In this paper we will show that for MicroWave- PECVD, SiNx:H
with good bulk passivating properties can be obtained if only N2
and SiH4 are used as process gasses. A drawback of the current
SiNx:H grown with N2 as precursor gas is the higher
absorption at shorter wavelengths with respect to SiNx:H
grown with NH3 as precursor gas.
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