Titel:
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Locating losses due to contact resistance, shunts and recombination by potential mapping with the Corescan
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-9-2002
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--02-039
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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10
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Download PDF
(7988kB)
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Gepresenteerd op: 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Breckenridge CO, USA, 11-14 augustus 2002.
Samenvatting:
A visualization tool to locate losses in a solar cell can bevery helpful in troubleshooting a non-optimal production
line. Therefore, the Corescan has been developed, in
which three different locating methods are incorporated,
the Corescan, Shuntscan and the new Voc scan. In this
paper it is explained how the scan results have to be
interpretated and it it is shown that the sensitivity of the
methods is more than sufficient. The unique Voc scan
method is introduced for the first time; this technique can
locate recombination losses on cells that are almost
complete (only the front contact has to be omitted).
Several examples of how the Corescan instrument can be
used for troubleshooting and process optimization are
presented in this paper. These examples will help users of
the instrument to relate measured scans with reasons for
non-optimal processing.
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