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Titel:
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Microwave PECVD of micro-crystalline silicon
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-5-2002
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--02-019
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(267kB)
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Gepresenteerd op: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.
Samenvatting:
The deposition of micro-crystalline silicon with a new linear microwaveplasma source is investigated. Advantages of this plasma source are
the high depositions rates and the large area on which a homogeneous
deposition can be achieved. Since this source has not yet been applied
for depositions of micro-crystalline silicon before, we explored a large
parameter space in order to find optimum growth conditions. It is observed
that with this microwave source it is possible to grow micro-crystalline
layers at higher silane/hydrogen ratios and deposition rates than for
conventional RF PECVD. In this paper, structural properties of silicon
layers deposited by microwave assisted PECVD are discussed.
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