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ECN publicatie:
Light trapping in alkaline texture etched crystalline silicon wafers
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-5-2000
ECN publicatienummer: Publicatie type:
ECN-RX--00-017 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
4 Download PDF  (243kB)

Gepresenteerd op: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.

The surface morphologies of alkaline etched pyramid and tilted pyramidtextures have been accurately mapped using a specially adapted atomic force microscope. The resulting height scans were used as input for the ray- tracing program BIRANDY whereby light trapping is directly related to the height data. Double and single sided textures were etched on (100), (210) and (311) wafers of approximately 100 mum thickness and reflectance and light trapping properties measured and modelled for various back surface reflectors and under encapsulation. Although the light trapping for tilted pyramid textures is high, the angles and symmetry of the #left brace#111#right brace# facets of upright pyramids on (100) leads to slightly better light trapping overall. The maximum short-circuit current density Jsc(max) for tilted pyramids approaches that of (100) when these textures are encapsulated due to the resulting reflection reduction. 6 refs.

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