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ECN publicatie:
Interdigitated back-contacted silicon heterojunction solar cells using semi-industrial processing equipment
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 14-6-2015
ECN publicatienummer: Publicatie type:
ECN-M--15-027 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
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Interdigitated back-contacted a-Si:H/c-Si heterojunction solar cells were made using two different approaches for patterning the a-Si:H layers: screen-printing in combination with wet chemical etching and in-situ mechanical masking. Processing was restricted to semi-industrial, low cost processing equipment on 6” wafers, cut back after processing into nine smaller cells by laser. After active layer patterning, implied Voc values of over 700 mV were measured for both approaches and the best Jsc and Voc values on cell level were 39.7 mA/cm2 and 697 mV, respectively. Efficiencies over 21% are expected, when some metallization issues at the rear are solved.

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