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ECN publicatie:
Sensitivity of crystalline silicon solar cells to metal impurities
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 5-9-2011
ECN publicatienummer: Publicatie type:
ECN-M--11-014 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
3 Download PDF  (129kB)

The sensitivity to impurities of the solar cell conversion efficiency is reported for a state of the art (i.e. 18%) and advance device architecture (i.e. 23%). The data are based on the experimental results obtained in the CrystalClear project for the state of the art cell process and extrapolated to a device with excellent front and rear surface passivation. Both device structures are not assumed to work in low injection level as several studies assumed before but real operating conditions are considered. This is a fundamental difference with the past and required for modeling future high efficiency devices. In general advanced devices will be more sensitive to the impurity content than the state of the art cell design. This effect is partly compensated by reducing the base thickness. In high efficiency devices, a large reduction of the impurity impact is visible for impurities with large capture cross section ratio like Fe which reduces its relative difference in comparison with e.g. Cr which has a small capture cross section ratio.

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