|
Titel:
|
|
Excellent rear side passivation on multi-crystalline silicon solar cells with 20 nm uncapped Al2O3 layer: industrialization of ALD for solar cell applications
|
|
|
|
Auteur(s):
|
Cesar, I.; Granneman, E.; Vermont, P.; Tois, E.; Manshanden, P.; Geerligs, L.J.; Bende, E.E.; Burgers, A.R.; Mewe, A.A.; Komatsu, Y.; Weeber, A.W.
|
|
|
|
Gepubliceerd door:
|
Publicatie datum:
|
|
ECN
Zonne-energie
|
20-7-2010
|
|
|
|
ECN publicatienummer:
|
Publicatie type:
|
|
ECN-M--10-026
|
Conferentiebijdrage
|
|
|
|
Aantal pagina's:
|
Volledige tekst:
|
|
6
|
Download PDF
(225kB)
|
Gepresenteerd op: 35th IEEE Photovoltaic Specialist Conference, Honolulu, USA, 20-25 juni 2010.
Samenvatting:
Current bottlenecks for industrialization of Al2O3 deposited by Atomic Layer Deposition (ALD) for crystalline silicon solar cell applications are low growth rate and stability of thin and uncapped layers during co-firing. First results on the performance of a high throughput ALD proto-type, the
Levitrack, are presented. Excellent passivation properties have been obtained after firing, for 12 nm thick films deposited on p-Cz (2.3 cm) with Seff <15cm/s (n=3x1015 cm-3). These layers are compatible with solar
cells that operate at a maximum open-circuit voltage of 720mV. Furthermore, we report on the passivation of 20nm uncapped aluminum oxide layers on the rear of ptype mc-Si bifacial cells. LBIC measurements unveiled excellent passivation properties on areas covered by 20nm of Al2O3 characterized by an IQE of 91% at 980nm. Remarkably, these lifetime and cell results were obtained without lengthy post-treatments like forming gas anneal.
Terug naar overzicht.