|
Titel:
|
|
Internal gettering of iron and chromium to improve multicrystalline silicon wafers
|
|
|
|
Auteur(s):
|
|
|
|
|
|
Gepubliceerd door:
|
Publicatie datum:
|
|
ECN
Zonne-energie
|
3-6-2009
|
|
|
|
ECN publicatienummer:
|
Publicatie type:
|
|
ECN-M--09-080
|
Conferentiebijdrage
|
|
|
|
Aantal pagina's:
|
Volledige tekst:
|
|
4
|
Download PDF
(497kB)
|
Gepresenteerd op: 3rd International Workshop on Crystalline Silicon Solar Cells, Trondheim, Norway, 3-5 juni 2009.
Samenvatting:
Metallic impurities in interstitial form are one of the most important limiting factors for minority carrier lifetimes in p-type silicon. Interstitial impurities can be transformed into less harmful precipitates by annealing. In this way, it is shown that the minority carrier lifetime can be increased with one order of magnitude for iron and with two orders of magnitude for chromium.
Terug naar overzicht.