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Titel:
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Stable and efficient p-type multicrystalline silicon cells containing 20 PPMA interstitial oxygen
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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21-9-2009
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ECN publicatienummer:
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Publicatie type:
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ECN-M--09-035
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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3
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Download PDF
(225kB)
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Gepresenteerd op: 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21-25 september 2009.
Samenvatting:
Interstitial oxygen is the most prevalent impurity in crystalline silicon. An upper limit of around 12 ppma [Oi] has long been accepted for multicrystalline solar cells. This paper demonstrates that it is possible to manufacture solar cells with an efficiency of over 15.4% at 20 ppma interstitial oxygen from commercial multicrystalline p-type silicon (mc-Si) wafers using ECN standard screen-print process. We also show that 20 ppma [Oi] wafers can be processed with industrial processing temperatures at least up to 900 oC.
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