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ECN publicatie:
Status of n-type solar cells for low-cost industrial production
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 21-9-2009
ECN publicatienummer: Publicatie type:
ECN-M--09-017 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
5 Download PDF  (630kB)

Gepresenteerd op: 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21-25 september 2009.

We have reached 18.6% efficiency on large area (243 cm2) n-type crystalline silicon solar cells using conventional industrial processes like tube furnace diffusion and screen-printing. The 18.6% cell is a bifacial one with a boron emitter at the front side and a phosphorous back-surface-field (BSF). We have applied an industrially feasible boron/phosphorous co-diffusion process, and a simple wet-chemical oxidation process to passivate the highly-doped boron emitter. In this paper we will compare our results to those obtained by others. Another cell type discussed in the paper is an n-type cell with the junction at the rear. This cell has a screen-printed aluminium alloyed emitter, and the processing is comparable to conventional p-type cells. We have obtained an efficiency of 17.4% with this n-type cell. Possible improvements discussed in literature are presented as well.

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