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Titel:
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Defect transformation in intentionally contaminated FZ silicon during low temperature annealing
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Auteur(s):
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Habenight, H.; Gundel, P.; Mchedlidze, T.; Kittler, M.; Coletti, G.; Warta, W.
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-9-2008
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ECN publicatienummer:
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Publicatie type:
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ECN-M--08-010
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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5
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Download PDF
(178kB)
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Gepresenteerd op: 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain, 1-5 september 2008.
Samenvatting:
Silicon samples intentionally contaminated with iron during growth were investigated in the as-grown state and after a prolonged low temperature anneal at around 300 C with different characterisation techniques, i.e. Deep Level Transient Spectroscopy (DLTS), Temperature Dependent Lifetime Spectroscopy (TLDS) and Photoluminescence (PL) spectroscopy. A defect transformation was found, changing the type of defect from iron-related complexes to interstitial iron.
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