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Titel:
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Ladingsdrager-recombinatie in (multi)kristallijn silicium zonnecellen: CV-MOS en Donker I-V
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-8-1998
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ECN publicatienummer:
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Publicatie type:
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ECN-C--99-011
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ECN rapport
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Aantal pagina's:
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Volledige tekst:
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88
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Download PDF
(2269kB)
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Samenvatting:
In order to gain insight into the physics of recombination in siliconsolar cells measurements were carried out by means of the so-called C-V
(capacity-voltage) MOS (Metal Oxide Semiconductor) installation. Also, a
so-called Dark I-V measurement installation has been designed, constructed
and tested. Both the results of the capacity-voltage (C-V) and
current-voltage (I-V) measurements were compared with model calculations. 10
refs.
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