ECN publicatie:
Hydrogenation of striation rings in n-type silicon wafers
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 14-9-2015
ECN publicatienummer: Publicatie type:
ECN-M--15-008 Conferentiebijdrage
Aantal pagina's: Volledige tekst:
5 Download PDF  (367kB)

N-type silicon has become more popular as base material for solar cells and receives an increasing amount of attention as a result. One of the defects occurring in n-type silicon are ring shaped patterns in lifetime maps (aka striation rings), which cause a steep decrease in conversion efficiency. Striation rings are linked to oxygen and can decrease recombination activity by anneals, illuminations and hydrogen in-diffusions, all which are usable on cell level. A decrease in recombination activity can be affected at temperatures up to 375 °C, whereas this decrease can be reversed by anneals above 500 °C. A side effect of these treatments is a change in resistivity even at temperatures below thermal donor formation. Investigations to the field stability of these treatments show no increase in recombination activity so far.

Terug naar overzicht.