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ECN publicatie:
XIS: A low-curent, high-voltage back-junction back-contact device
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1-9-2013
ECN publicatienummer: Publicatie type:
ECN-W--13-026 Artikel wetenschap tijdschrift
Aantal pagina's:

Gepubliceerd in: Energy Procedia (Elsevier), , 2013, Vol.38, p.443-448.

In this paper we present experimental results of a low-current, high-voltage back-junction back-contact device. The concept is demonstrated by the successful transformation of finished IBC cells into XIS (Crystalline Silicon Interconnected Strips) devices, leading to 8.5 V for a series connection of 14 strip cells. Different grooving methods for cell separation were evaluated regarding the effect on the quality of the groove surface. The effect of the groove passivation, which is regarded as a critical parameter to obtain high-efficiency XIS devices, was simulated to gain a better understanding of the processing requirements.

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