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ECN publicatie:
Light-trapping in saw-damage etched silicon wafers
Gepubliceerd door: Publicatie datum:
ECN Zonne-energie 1997
ECN publicatienummer: Publicatie type:
ECN-RX--97-030 Artikel wetenschap tijdschrift
Aantal pagina's:

Gepubliceerd in: Paper, presented at the 14th European photovoltaic solar energy conference and exhibition, 30 June - 4 July 1997, Barcelona, Spa (), , , Vol., p.-.

In this work we investigate the light trapping properties of the textureproduced by saw-damage etches. A saw-damage etch is a concentrated lye etch commonly used for saw-damage removal of silicon wafers. On multi-crystalline silicon wafers such an etch gives a faceted surface. The facets typically have low tilt angles of about 10 to 20 degrees resulting in a relatively flat texture. Because of the flat texture, the reflection is about the same as for a polished wafer. We show in the paper that the infrared light in the wafer is still randomised and trapped. We demonstrate this by measuring and fitting reflection- and transmission curves of saw-damage etched wafers both with- and without evaporating a silver reflector on one side. From the observed long wavelength reflection and transmission we can infer the light trapping properties. The curves have been fitted using an optical model that takes into account scattering. 7 figs., 8 refs.

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