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Titel:
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Impact of defect distribution and impurities on multicrystalline silicon cell efficiency
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-5-2003
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--03-016
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(547kB)
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Gepresenteerd op: 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 mei 2003.
Samenvatting:
The material properties of several commerciallyavailable multicrystalline silicon ingots are analysed, and
their relation with cell efficiency is evaluated. Three
aspects are clearly correlated to the cell results. i) Fe
contamination, in particular the excessive contamination at
the edge of ingots; ii) oxygen contamination, deteriorating
the properties in the bottom of some ingots, and iii)
distribution of minority carrier lifetime in wafers, which is
correlated to the crystal defect density. With consideration
of these aspects, the variation of cell properties within an
ingot, and to a lesser extent between ingots, can be
understood.
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