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Titel:
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mc-Si: Relation between ingot quality and cell efficiency
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Auteur(s):
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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1-9-2002
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ECN publicatienummer:
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Publicatie type:
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ECN-RX--02-041
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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4
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Download PDF
(1279kB)
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Gepresenteerd op: 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Breckenridge CO, USA, 11-14 augustus 2002.
Samenvatting:
Material properties and solar cells of several common multicrystallineingots have been investigated and compared. Apart from the contaminated
end parts of the ingots the cell quality correlates well with the as-received
lifetime, and the lifetime profile through the ingot correlates with
the distribution of defect densities in the material. The as-received
lifetime after light soaking is a reasonable predictive parameter for
cell performance for the complete ingot if the major impurity in the
end parts is iron, and if the oxygen concentration is low. A high oxygen
concentration of 15-20 ppma in the bottom parts of some ingots, instead
of the more common 5-10 ppma for that position, correlates with a strong
reduction of cell efficiency.
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