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Titel:
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Passivation of Highly Boron Doped Silicon Surfaces by Sputtered AlOx and PECVD SiN, a Comparison
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Auteur(s):
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Li, T.T.A.; Cuevas, A.; Tan, J.; Samundsett, C.; Oosterling - Saynova, D.S.; Geerligs, L.J.
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Gepubliceerd door:
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Publicatie datum:
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ECN
Zonne-energie
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12-12-2010
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ECN publicatienummer:
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Publicatie type:
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ECN-M--10-067
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Conferentiebijdrage
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Aantal pagina's:
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Volledige tekst:
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2
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Download PDF
(106kB)
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Gepresenteerd op: Conference on Optoelectronic and Microelectronic Materials and Devices, Canberra, Australia, 12-15 december 2010.
Samenvatting:
We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an op-timised PECDV SiN process that in-cludes a chemically grown SiO2 interfa-cial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88–210 O/?, are already consistent with solar cell with efficiencies in the 20% range.
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